Student Work
The characterization of a power amplifier
PublicThis project primarily focused on the characterization of Philips Semiconductors' BLF4G20LS-110 Laterally diffused metal on silicon (LDMOS) RF power transistor. After manual testing for performance parameters such as efficiency, linearity and gain, matching impedance points were verified with an automated set-up called load pull. The board design was compared with ADS simulations and the board layout was completed using AutoCAD. The end result of the project was a demonstration circuit which exceeded the current specifications for this power transistor.
- This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
- Creator
- Publisher
- Identifier
- 05D007M
- Advisor
- Year
- 2005
- Date created
- 2005-01-01
- Resource type
- Major
- Rights statement
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Permanent link to this page: https://digital.wpi.edu/show/bc386n374