This project primarily focused on the characterization of Philips Semiconductors' BLF4G20LS-110 Laterally diffused metal on silicon (LDMOS) RF power transistor. After manual testing for performance parameters such as efficiency, linearity and gain, matching impedance points were verified with an automated set-up called load pull. The board design was compared with ADS simulations and the board layout was completed using AutoCAD. The end result of the project was a demonstration circuit which exceeded the current specifications for this power transistor.

• This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.

Creator

• Mammen, Mereen Susan.
• Piekielniak, Ewa.
• Davis, Justin Eric.

Publisher

• Worcester Polytechnic Institute

Identifier

• 05D007M

Advisor

• Ludwig, Reinhold

Year

• 2005

Date created

• 2005-01-01

Resource type

• Major Qualifying Project

Major

• Electrical & Computer Engineering
• Electrical Engineering

Rights statement

• In Copyright