Extraordinary magnetoresistance (EMR) refers to the geometric magnetoresistance (MR) in a system composed of semiconductors and non-ferromagnetic metals. In this report, 2D EMR devices are explored using the Finite Element Method. The first approach is a drift velocity model of conduction which shows agreement with experimental observations. The second approach is to solve the BTE in the relaxation time approximation for the carrier distribution in phase space. A simple 1D BTE conduction example is shown to agree with analytical calculations.

• This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.

Creator

• Girgis, Alexi M.

Publisher

• Worcester Polytechnic Institute

Identifier

• 05C038M

Advisor

• Ram-Mohan, L. Ramdas

Year

• 2005

Date created

• 2005-01-01

Resource type

• Major Qualifying Project

Major

• Physics

Rights statement

• In Copyright