Performance Benchmark of Parallel SiC and Hybrid GaN-SiC Power Switches

Faker, Wassim

Student Work

Performance Benchmark of Parallel SiC and Hybrid GaN-SiC Power Switches

Public Deposited

This project was conducted at Kyoto University of Advanced Sciences(KUAS) for seven weeks to contribute specific new knowledge and understanding in the experimental electrical characterization of modern gallium nitride (GaN) and silicon carbide (SiC) transistors in a parallel and hybrid configuration. The project involved deploying and using the PCB design software Altium and experimental test setups and methodologies such as current and voltage probes, oscilloscopes, and power tests. The project aimed to conduct a performance benchmark of parallel Silicon Carbide (SiC) and hybrid Gallium Nitride-Silicon Carbide (GaN-SiC) power switches, and by conducting a varied of efficiency tests on the GaN-SiC hybrid and the SiC in parallel, we were able to notice that the GaN-SiC hybrid exhibited significantly higher efficiency than the SiC in parallel. This is due to the better switching efficiency that the GaN provides when combined with the SiC, which has greater free-wheeling performance. This project also completed several high-performance designs that can be tested for further research.

This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.

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