The Effect of Electromagnetic Pressure on Silicon Wafer ManufacturingPublic Deposited
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In this research, a new manufacturing process for creating silicon crystal substrates is proposed. It differs from conventional plate solidification processes in the utilization of electromagnetic whose goal is to reduce the substrate thickness while it is being continuously pulled from the liquid material in the crucible. This research utilizes an alloy mixture of bismuth and indium instead of silicon due to the hazards and reactive nature of liquid silicon. In previous studies conducted at Shibaura Institute of Technology, several initial conditions of the electromagnetic pressure were unsuccessful at creating large areas of ultra-thin cross sections. This study focused on the application of frequencies at 2.5 MHz and 630 kHz to thin the solidifying metal alloy substrates as well as the use of thermal Finite Element Analysis to simulate the process and estimate the optimal rate of forced convection heat transfer on the system. By using the simulated heat transfer coefficient as a starting point for the cooling units, keeping the solidification line of the substrate centered under the electromagnetic coils was easier. By running the experiments through a variety of voltage variations, multiple successful combinations of frequencies, voltages, and magnetic flux densities were found that created substrates with thickness less than 100 micrometers in larger areas than prior studies.
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