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Tailored Synthesis of Bi2S3 Thin Film to Enhance Optoelectronic Performance

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Metal sulfides with moderate band gaps are desired for efficient generation of electricity or fuels from sunlight. Bi2S3, with a band gap of 1.3 eV, has been commonly synthesized by the successive ionic layer adsorption and reaction to produce nanocrystalline films. Annealing of the solution-processed Bi2S3 nanocrystals has been attempted at low temperatures, which may not improve crystallinity. Here, we report a highly crystalline and phase-pure Bi2S3 thin film photoelectrode synthesized by high-temperature annealing of the solution-processed nanocrystalline film in a sulfur vapor environment. The sulfur-annealed Bi2S3 thin film exhibits significantly enhanced light absorption and photoexcited carrier lifetime compared to the un-annealed film.

  • This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
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  • 2020-11-19
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  • E-project-042617-154056
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  • 2017
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  • 2017-04-26
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