Plasma Etch is a process used in semiconductor manufacturing to remove very small amounts of material in anisotropic or isotropic patterns. Laser interferometry is one system of endpoint that measures thickness using interference patterns from the refractive index of the material and wavelength of the light used. The interference pattern typically looks like a wave and is interrupted when endpoint is reached. Optical Emission Spectrometric (OES) systems measure the emission from plasma in the process to determine the materials being etched and the reactants in the process. OES can detect endpoint by tracking materials in the process chamber and detecting when the desired material has been etched.

• This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.

Creator

• Culkin, Nicholas

Subject

• Industry
• Project-Based Learning
• Computing

Publisher

• Worcester Polytechnic Institute

Identifier

• E-project-032724-152146
• 119777

Advisor

• Kmiotek, Stephen J.

Year

• 2024

Sponsor

• Northrop Grumman Corporation

UN Sustainable Development Goals

• 9 - Industry, Innovation and Infrastructure

Date created

• 2024-03-27

Resource type

• Major Qualifying Project

Major

• Chemical Engineering

Source

• E-project-032724-152146

Rights statement

• In Copyright