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Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon

Stichwort:

silicon, defect, semiconductor, Czochralski, and twin

Schöpfer:

Kearns, Joel K.

Advisor:

Apelian, Diran

Herausgeber:

Worcester Polytechnic Institute

Datum erstellt:

2019-04-22

Resource Type:

Dissertation

Degree:

PhD

Unit (Department):

Materials Science & Engineering