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1. Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon

Stichwort:: silicon, defect, semiconductor, Czochralski, and twin
Schöpfer:: Kearns, Joel K.
Advisor:: Apelian, Diran
Herausgeber:: Worcester Polytechnic Institute
Datum erstellt:: 2019-04-22
Resource Type:: Dissertation
Degree:: PhD
Unit (Department):: Materials Science & Engineering