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Holzer, Joseph
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Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon
Keyword:
silicon
,
defect
,
semiconductor
,
Czochralski
, and
twin
Creator:
Kearns, Joel K.
Advisor:
Apelian, Diran
Publisher:
Worcester Polytechnic Institute
Date Created:
2019-04-22
Resource Type:
Dissertation
Degree:
PhD
Unit (Department):
Materials Science & Engineering
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PhD Dissertations
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2019
1
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Kearns, Joel K.
1
Advisor
Apelian, Diran
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Apelian, Diran
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Brody, Harold
1
Glicksman, Martin
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Holzer, Joseph
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Mishra, Brajendra
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Unit (Department)
Materials Science & Engineering
1
Publisher
Worcester Polytechnic Institute
1
Resource type
Dissertation
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